abrupt heterojunction meaning in English

突变异质结

The abrupt heterojunction diode is composed of a 1 m thick heavily doped n - type sic layer and a 0 . 4 m thick lightly doped p - type sic1 - xgex layer with varied composition ratios
在这个异质结中， n型重掺杂3c - sic层的厚度为1 m ， p型轻掺杂sicge层厚度为0 . 4 m ，二者之间形成突变异质结。
In this thesis , the effects of applying p - n graded heterojunction instead of p - n abrupt heterojunction have been analyzed theoretically and manufactured experimentally , and great progress has been obtained
本文从理论上分析此结构改进的合理性和有效性，得到一系列地结论。并且用双层突变拟合渐变方式进行芯片生长，实验结果符合理论分析。